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STN4NF03L
N-channel 30 V - 0.039 - 6.5 A - SOT-223 STripFETTM II Power MOSFET
Features
Type STN4NF03L
VDSS 30 V
RDS(on) <0.05
ID 6.5 A
2
Low threshold drive
1
SOT-223
2
3
Application
Switching applications
Description
This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking 4NF03L Package SOT-223 Packaging Tape & reel
Order code STN4NF03L
December 2007
Rev 6
1/12
www.st.com 12
Contents
STN4NF03L
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STN4NF03L
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 30 16 6.5 4.5 26 3.3 0.026 100 -55 to 150 Unit V V A A A W W/C mJ C
PTOT EAS (2) TJ Tstg
Single pulse avalanche energy Operating junction temperature Storage temperature
1. Pulse width limited by safe operating area 2. Starting TJ = 25 C, ID = 6 A
Table 3.
Symbol Rthj-pcb Rthj-pcb Tl
Thermal data
Parameter Thermal resistance junction-PCB(1) max Thermal resistance junction-PCB(2) max Value 38 100 260 Unit C/W C/W C
Maximum lead temperature for soldering purpose (for 10 sec. 1.6 mm from case) typ
1. When mounted on 1 inch2 FR-4 board, 2 oz. Cu., t < 10 s 2. Minimum recommended footprint
3/12
Electrical characteristics
STN4NF03L
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = max rating, VDS = max rating @125 C VGS = 16 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 2 A VGS = 5 V, ID= 2 A 1 0.039 0.046 0.05 0.06 Min. 30 1 10
100
Typ.
Max.
Unit V A A nA V
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 10 V, ID = 1 A Min. 3 Typ. 6 330 90 40 6.5 3.2 2 9 Max. Unit S pF pF pF nC nC nC
VDS = 25 V, f=1 MHz, VGS = 0
VDD= 24 V, ID = 4 A VGS =10 V (see Figure 14)
1. Pulsed: pulse duration = 300 s, duty cycle 1.5%
Table 6.
Symbol td(on) tr
Switching times
Parameter Turn-on delay time rise time Test conditions VDD = 15 V, ID= 2 A, RG = 4.7 , VGS = 4.5 V (see Figure 15) VDD = 15 V, ID = 2 A, RG = 4.7 , VGS = 4.5 V (see Figure 15) Min. Typ. 11 100 Max. Unit ns ns
td(off) tf
Turn-off-delay time fall time
35 22
ns ns
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STN4NF03L
Electrical characteristics
Table 7.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.5 A, VGS = 0 ISD = 6.5 A, di/dt = 100 A/s, VDD = 15 V, Tj=150 C (see Figure 15) 34 25 1.4 Test conditions Min. Typ. Max 6.5 26 1.5 Unit A A V ns nC A
VSD(2) trr Qrr IRRM
1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STN4NF03L
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area Figure 3. Thermal impedance junction-PCB
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
6/12
STN4NF03L Figure 8. Gate charge vs. gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs. temperature
Figure 11. Normalized on resistance vs. temperature
Figure 12. Source-drain diode forward characteristics
7/12
Test circuit
STN4NF03L
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
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STN4NF03L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STN4NF03L
SOT-223 MECHANICAL DATA
mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8
DIM.
L
l2
e1
a b f
d c e4
C
l1
B
C
E
g
P008B
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STN4NF03L
Revision history
5
Revision history
Table 8.
Date
Document revision history
Revision Changes - Initial electronic version. - Document status promoted from preliminary data to datasheet Document reformatted no content change Updated marking on Table 1: Device summary Updated EAS value on Table 2: Absolute maximum ratings
21-Jun-2004 09-Oct-2006 27-Nov-2007 11-Dec-2007
3 4 5 6
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STN4NF03L
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